RAM pro notebook 2GB DDR2 533 CL4 SO-DIMM 128Mx8 (TS256MSQ64V5U)

The TS256MSQ64V5U is a 256M x 64bits DDR2–533 SO-DIMM. The TS256MSQ64V5U consists of 16pcs 128Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS256MSQ64V5U is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Features

RoHS compliant products.

JEDEC standard 1.8V ± 0.1V Power supply

VDDQ=1.8V ± 0.1V

Max clock Freq: 267MHZ; 533Mb/s/Pin.

Posted CAS

Programmable CAS Latency: 3,4,5

Programmable Additive Latency :0, 1,2,3 and 4

Write Latency (WL) = Read Latency (RL)-1

Burst Length: 4,8(Interleave/nib­ble sequential)

Programmable sequential / Interleave Burst Mode

Bi-directional Differential Data-Strobe (Single-ended

data-strobe is an optional feature)

Off-Chip Driver (OCD) Impedance Adjustment

MRS cycle with address key programs.

On Die Termination

Serial presence detect with EEPROM